Heterojunction selile ikora neza ya 26,6% kuri P-silicon wafers yagezweho.

Iterambere rya heterojonction ryakozwe kuri amorphous / kristaline silicon (a-Si: H / c-Si) ifite imiterere yihariye ya elegitoronike, ikwiranye ningirabuzimafatizo zuba za silicon heterojunction (SHJ). Kwishyira hamwe kwa ultra-thin a-Si: H passivation layer yageze kumurongo mwinshi wa voltage (Voc) ya mV 750. Byongeye kandi, a-Si: H itumanaho, ikoporowe hamwe n-ubwoko cyangwa p-ubwoko, irashobora gutondekanya mugice kivanze, kugabanya kwinjiza parasitike no kongera uburyo bwo guhitamo no gutwara neza.

XU Xixiang, Li Zhenguo, na LONGi Green Energy Technology Co., Ltd. Abanditsi bakoresheje ingamba zo gukwirakwiza fosifore bakoresheje ingamba zo kwitegura kandi bakoresheje silikoni ya nanocrystalline (nc-Si: H) mu itumanaho ry’abatwara ibintu, byongera cyane imikorere y’imirasire y'izuba P yo mu bwoko bwa SHJ igera kuri 26.56%, bityo hashyirwaho ibipimo bishya byerekana imikorere ya P -ubwoko bwa silicon izuba.

Abanditsi batanga ikiganiro kirambuye kubijyanye niterambere ryibikoresho no kunoza imikorere ya Photovoltaque. Hanyuma, isesengura ryamashanyarazi ryakozwe kugirango hamenyekane inzira yiterambere ryigihe kizaza cya tekinoroji ya P-SHJ.